Electrical Properties of MIM and MIS Structure using Carbon Nitride Films
نویسندگان
چکیده
منابع مشابه
Doping and electrical properties of amorphous silicon carbon nitride films
Electrical properties and annealing behaviour of undoped and doped amorphous silicon carbon nitride (a-SiC N ) thin films, x y deposited by ion beam sputtering techniques, have been studied. Doping of the a-SiC N thin films with magnesium (Mg), and x y phosphorous (P) was carried out by ion implantation techniques, and subsequent annealing effect on the electrical conductivity (s) and activatio...
متن کاملarchitecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولGrowth and Properties of Carbon Nitride Thin Films
Recent research on carbon nitride thin films grown using pulsed laser deposition combined with atomic beam techniques is reviewed. The composition, growth mechanism and phases of these films have been systematically investigated. The nitrogen composition was found to increase to a limiting value of 50% as the fluence was decreased for laser ablation at both 532 nm and 248 nm wavelengths. Time o...
متن کاملinvestigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولnano-composite carbon nitride films
A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n Si substrates. Transmission Electron Microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/μm. When the films were etched in an HF:NH4F solution for ten minu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Transactions on Electrical and Electronic Materials
سال: 2006
ISSN: 1229-7607
DOI: 10.4313/teem.2006.7.5.257